Abstract
We report the first successful structure determination of a reconstructed compound semiconductor based on mass-resolved RBS. For the GaSb (110) surface blocking directions have been determined for ions backscattered from the Ga atoms and from the Sb atoms in the near-surface region. The reconstruction is characterised by a rotation of the bond between toplayer Sb and Ga atoms. We find a bond rotation angle of (29.5±1.5)°, which is close to a ELEED value recently reported for this surface. The rms vibrational amplitude of surface atoms is enhanced by a factor 1.5 with respect to the bulk value.
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