Abstract
Ion-assisted doping has been used to control the phosphorus incorporation and p-type doping of CdTe epitaxial films. Ion dose, ion energy, growth temperature, and growth rate were all varied. A saturated carrier density of 2×1017 cm−3 was observed, although secondary ion mass spectroscopy analyses of several films indicated a continuous increase in phosphorus concentration in the films with increasing ion dose. Hole mobilities, majority-carrier lifetimes, and minority-carrier lifetimes were measured as a function of carrier density. n-CdS/p-CdTe heterojunction solar cells were prepared to further characterize the CdTe films for solar cell applications. Spectral response measurements indicated that both the minority-carrier lifetime and the interface collection function decreased with increases in carrier density. Such reduced values were not seen for CdS/CdTe heterojunctions prepared on P-doped single-crystal CdTe with high carrier densities.
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