Abstract
Injection of accelerated ion beam into a target specimen offers a valuable tool for altering its physical properties in a controllable manner. One of the major applications of this type of materials is the obtaining of a novel structure, namely, Tunable Electronic Materials with Pores in Oxide on Silicon (TEMPOS) for device fabrication. In the TEMPOS structure, swift heavy ions (SHI) create ion tracks in dielectric layer on semiconductor. Insertion of suitable materials (sensitive to light, gas, humidity, organic and inorganic vapors etc.) in these ion tracks can give multi-parametric sensors in a small area. The high aspect ratio of the TEMPOS structures results in a fast response time and high sensitivity and making it a probable candidate for sensor fabrication. The TEMPOS structure itself has a quasi-ferromagnetic property and inserting transition metal oxides (TMOs) nanoparticles inside the tracks makes it sensitive to magnetic properties.
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