Ion-stimulated desorption from a semiconductor surface containing metal nanodots

Abstract

A model of the mechanism of ion-stimulated desorption of atoms and molecules pre-adsorbed from the surface of wide-band gap samples with a system of metal nanodots is developed. The relaxation processes of vibration-exciting states in adsorbed layer via electronic channel are considered. It is found in the model that the presence of nanosized metal clusters can affect the relaxation rate of the vibration excitations on the surface and the velocity of ion-stimulated desorption.