Abstract
Nitriding of a silicon surface with a beam of low-energy (100–700 eV) nitrogen ions from a source with electronic excitation was studied. The density of the N+ flux on the nitrided sample was up to 4.0 μA/cm2. After the treatment, a silicon nitride monolayer film formed on the silicon surface, as evidenced by the results of profiling, calculation of the surface concentration, and energy shift of the Auger peak of silicon by 6.1 eV.
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