Abstract
Nanodot arrays were formed on Si(110) surface undernormal-incident Ar+ ion sputtering at substratetemperature of 800 degrees C. The ion flux was 20 μA/cm2, andthe ion energies were 1–5 keV. The surface was imaged by an atomic forcemicroscope (AFM). It was found that with the increasing ion energy, theaverage ellipticity of the dots changes in an oscillating manner;meanwhile the average dot size increases monotonously. Based on adynamic continuum model, and taking into consideration the asymmetry ofthe Ehrlich-Schwoebel diffusions along the ⟨100⟩ and⟨11̄0⟩ crystallographic directions, we carry out thesimulations, which reproduce the experimental results qualitatively.
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