Abstract
We have experimentally studied a new H+-ion-induced relaxation technique for compressive-strained SiGe layers on a buried oxide layer (BOX) for high-performance p-channel source heterojunction devices, to improve the crystalline quality of the ion-implanted SiGe layers, using the very steep recoil energy ER distribution of H+ ions. In addition, we have compared the H+-ion-induced relaxation phenomena of the strained SiGe with the O+-ion-induced one. We have experimentally shown that the strained SiGe layers can also be fully relaxed even by H+ ion implantation, using Raman spectroscopy analysis. In addition, the obtained Raman spectroscopy data show that the crystalline quality of H+-ion-implanted SiGe layers can be improved and is much more uniform, compared with that of the O+-ion-implanted area, as expected. However, high-dose H+ ion implantation locally causes the splitting of strained SiGe layers from the BOX layer, which is the technical limitation of H+ ions.
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