Ion sources and implantation systems

Abstract

Ion implantation makes possible unique metal surface characteristics that have found widespread applications. The still developing implanter technology offers a variety of systems suited to different purposes. The types of ion source are described in terms of attributes which influence the choise of a source for a particular application. Extractors are discussed to a lesser extent, and other system parts are mentioned briefly. Although present semiconductor ion implanters deliver 10–20 mA, the technology can be extended easily to over 100 mA, especially when mass analysis is not required. For large-area applications, the ion source can be one of several designs based on magnetic cusp confinement of a plasma containing the ion of interest.