Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells

Abstract

For realizing low-cost and high-conversion-efficiency silicon solar cells, we propose an ion shower doping technique for fabricating conventional and selective emitter structure solar cells. Because of its high through put with a large beam area, the technique could lead to low-cost production of the emitter layer. We used this technique to form a uniform emitter layer and also a selective high-doping emitter region for silicon solar cells, which were compared with cells prepared by POCl3 diffusion. The conventional structure cells were confirmed to have good electrical properties with uniform conversion efficiency compared with the cells prepared by POCl3 diffusion. There was no doping-induced damage nor metal impurities interfused during the ion shower doping. In addition, the conversion efficiency of selective emitter structure cells was higher than that of cell prepared by POCl3 diffusion only. We concluded that the ion shower doping technique is useful for forming a uniform emitter layer as well as a selective emitter region.