Abstract
An ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si0.5Ge0.5/sSOI quantum-well (QW) heterostructure and an Al2O3 dielectric layer as sensing membrane coupling with the back-gate. The voltage sensitivity is much higher than the reference SOI ISFET, typically at low drain current due to the high hole mobility confined in the SiGe QW. A high voltage sensitivity 360mV/pH with a linearity of 99.89% was achieved for QW ISFET. The results of the planar QW ISFET show great potential for low cost, real-time monitoring of bio-chemicals due to its simplified process.
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