Ion Sensing with Solution-Gated Graphene Field-Effect Sensors in the Frequency Domain.

Abstract

Here, we examine the concept of frequency domain sensing with solution-gated graphene field-effect transistors, where a sine wave of primary frequency (1f) was applied at the gate and modulation of the power spectral density (PSD) of the drain-source current at 1f, 2f, and 3f was examined as the salt in the gate electrolyte was switched from KCl to CaCl2, and their concentrations were varied. The PSD at 1f, 2f, and 3f increased with the concentration of KCl or CaCl2, with the PSD at 1f being the most sensitive. We further correlated these changes to the shift in Dirac point. Switching the graphene substrate from oxide to hexagonal boron nitride, led to an improved device-to-device reproducibility and a significant reduction of noise, which translated to a higher signal-to-noise ratio and resolution in sensing salt concentrations. The signal-to-noise ratio at 1f was found to be a logarithmic function of KCl or CaCl2 concentration in the 0.1 to 1000 mM range.