Abstract
He + impact collision ion scattering spectroscopy (ICISS) has been applied to the Ge(111)c(2 × 8). Ge(111)7 × 7−Sn. 5 × 5−Sn. and 3 × 3 −Sn surfaces. For the Sn-covered Ge(111) surfaces, it has been found that most Sn atoms occupy top portions of the Ge surfaces. From comparisons of computer simulation for ICISS curves with experiment, it has been concluded that trajectory-dependent neutralization of He + denies a simple view of shadowing and focusing of He + usually assumed in ICISS.
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