Abstract
Si/CoSi 2/Si heterostructures have been fabricated by high-dose Co implantation into Si (111) and Si (100) with implantation energies between 30 and 200 keV and subsequent high temperature annealing. The strain and orientation of CoSi 2 layers with different thicknesses have been measured by ion channeling. The strain of the buried CoSi 2 layers is observed to be independent of the thickness of the layer, whereas the orientation of the (111) CoSi 2 layer changes from B-type for the thin layer to A-type for the thicker layers.
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