Abstract
Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/oF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
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