Abstract
We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K. These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications.
Highlights
The phenomenon of resistive switching in thin dielectric films has attracted much attention in last decade [1]. This phenomenon consists in a reversible persistent change of the resistance of thin dielectric films sandwiched between two conductive electrodes under the external bias voltage applied between the electrodes
The potential fields of application of the memristors include the development of the nonvolatile computer memory of new generation (Resistive Random Access Memory, RRAM) [3, 4], neuromorphic electron devices [5,6,7] and so on
The memristor switches from the initial high resistance state (HRS) to the low resistance state (LRS)
Summary
The phenomenon of resistive switching in thin dielectric films has attracted much attention in last decade [1]. Today’s understanding of the origin of the resistive switching in the metal oxides is based on the concept of the migration (the drift and/or diffusion) of the oxygen ions in the external electric field [8]. Advances in Condensed Matter Physics the parameters of the oxygen ion transport, such as the activation energies for the oxygen ion migration, the mobile ion concentration, and mobility Knowing these parameters is essential to find the ways to improve the performance (first of all—the reproducibility and the reliability) of the memristor devices based on the metal oxides. Yttria stabilized zirconia (YSZ) ZrO2(Y) is a promising material for the memristor devices [10,11,12,13] It is featured by a high concentration of oxygen vacancies that provides the high anion mobility [14]. This method is a variant of the classical one of measuring the dynamic I-V curves [18]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
