Abstract
The potential and limitations of high-performance secondary ion mass spectrometry (SIMS) for the characterization of high technology materials are discussed. It is shown that SIMS can provide important progress in ultratrace bulk analysis, microanalysis, and surface and interface analysis. The major developments reported deal with quantitative multielement analysis in the nanograms per gram range, study of grain boundary segregation of trace elements in refractory metals, trace analysis in monolayers, and high accuracy depth distribution analysis for the development of microelectronic devices.
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