Abstract

Ion beam induced charge collection (IBICC) and time resolved IBICC (TRIBICC) techniques were used for imaging electronic properties of cadmium zinc telluride (CZT) room temperature radiation detectors. The detectors were bombarded with a scanned 5.4 MeV He microbeam and the detector response was analyzed at each point. The electron mobility (μe) and lifetime (τe), and charge collection efficiency maps were calculated from the data. In order to determine the radiation damage to the detectors, the signal deterioration was measured as the function of dose.

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