Abstract
ABSTRACTIon irradiation with 130 keV Ge+ or 120 keV Sb+ has modified, by thermal spike effect, the local atomic arrangement in the structure of as-deposited sputtered amorphous GeTe and Ge2Sb2Te5 thin films. The changes in the local order have been analyzed by Raman and EXAFS spectroscopy. In addition the crystallization kinetic, measured by “in situ” time resolved reflectivity and optical microscope analysis, is found to be faster in the irradiated samples. The nucleation rate and the grain growth velocity are enhanced by a factor of about ten with respect to the unirradiated samples in the investigated temperature range (120°C –170°C).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
