Abstract
Effects of ion implantation on epitaxial CaF 2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF 2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 10 16 cm −2. It has also been found that optical properties of CaF 2 films change, even in hydrogen-implanted samples with a dose of 2 × 10 16 cm −2, after exposing the samples to an oxygen plasma.
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