Abstract
Residual stresses in materials and components such as thin films in microelectromechanical systems are developed during the production process and may drastically limit their functionality and lifetime; their minimization is thus of utmost technical importance. Ion beam irradiation in polycrystalline Mo thin films sputter-deposited on (100) silicon wafer at room temperature has been used to reduce the residual stresses present in the layer and thus to improve the mechanical stability of the film/substrate set. Although a strong reduction of residual stresses in the whole film is evidenced, irradiation affects the film-substrate bond strength; defect creation at the film-substrate interface due to ion implantation induces thin-film delamination.
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