Abstract
Abstract A series of ion-irradiation experiments were conducted to explore the radiation response of the ilmenite-group oxide geikielite (MgTiO3). In these experiments, oriented single crystals were irradiated with either 200 keV Ar2+or 400keVXe2+ and Rutherford back-scattering spectrometry combined with ion channelling (RBS/C) was used to characterize consequent radiation damage. In the 200keVAr2+ experiments, the sample was held at 100K and a buried amorphous layer 55 nm thick formed underneath a defective crystalline layer 90 nm thick after exposure to a fluence of 2 × 1015 ions cm−2. More detailed experiments with 400keVXe2+ employed incremental ion irradiation followed by RBS/C to determine the extent and rate of radiation damage at temperatures of 170, 300 and 470 K. These irradiations show that there is a strong temperature dependence for damage accumulation and that critical amorphization fluences increase from 2 × 1015 Xe2+cm−2 (170 K) to 6 × 1015 Xe2+cm−2 (300 K) to greater than 2.5 × 1016 Xe2+c...
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