Ion-induced release of H and D implanted in Be, C, Si and SiC

Abstract

Retention and ion-induced release of H and D implanted into Be, C, Si and SiC at the energy of 5–8 keV have been investigated at room temperature by elastic recoil detection analysis. Ion-induced release is induced both by low energy (5–20 keV) and high energy (2000 keV) 4He ions. For retention and isotopic replacement of H and D, the observed depth profiles show similar features as predicted by the Local Mixing Model. It is shown that the release behavior during 4He + irradiation at low energies is different from that for hydrogen bombardment. The release rate observed in C and SiC is much smaller than that in Be and Si. The release cross sections for high energy (2000 keV) 4He + bombardment are an order of magnitude larger than those for low energy bombardment (5–20 keV).