Ion-implanted Surface Analysis Reference Materials: Certification of Dose Densities from 1016 to 1013 cm-2

Abstract

This German contribution to the VAMAS prenormative project on ion-implanted reference materials describes a general procedure for the certification of retained dose densities of elements of the third and higher periods of the Periodic Table at levels of foremost technological interest, i.e. 1016–1013 cm-2 (i.e. atoms cm-2), in wafer-type host materials. The proposed procedure satisfies all requirements of a definitive method and can be readily imple-mented in many laboratories worldwide. In a first step, a primary reference material (PRM) at several 1015 cm-2 is certified by referencing to a weighed, evenly spread deposit of the analyte by means of wavelength-dispersive x-ray fluorescence spectrometry (WD/XFS). All further certification of retained dose densities is relative to this PRM. Dose densities of similar level are certified (relative to the PRM) by means of WD/XFS or electron microbeam analysis (also by Rutherford backscattering spectroscopy ifZimpl>Zhost). Dose densities below 1015 cm-2 are certified (relative to the PRM or a substitute) by means of comparativein situion dosimetry. Requirements are specified for the deposit, the ion implants, the measurements by WD/XFS and certification by comparativein situion dosimetry. The procedure is verified by experiment.