Abstract
A new technology of ion-implanted silicon MESFET's on high-resistivity substrates has been developed to reduce substrate effects. Consequently, the devices show an improved static behavior concerning pinchoff and drain feedback. Static and dynamic performance will be presented, the latter showing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f_{max}=14</tex> GHz calculated from scattering parameter measurements and a large signal switching time of 60 ps. The transit frequency of the intrinsic device is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f_{T} \sim 3.9</tex> GHz.
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