Ion-Implanted Photoresist Stripping by Using Organic Solvents

Abstract

Various organic solvent-based mixture solutions were used to remove the ion-implanted photoresist on trench-patterned GaAs wafers. The mixture of acetonitrile (AcN) and dimethyl sulfoxide (DMSO) could remove bulk photoresist and crust but left a small amount of photoresist residue. However, the combination of AcN and DMSO with a small amount of HF completely removed high-dose ion-implanted photoresist even at 30 °C (ion-implantation dose of 5×1015 ions/cm2 and the energy of 70 keV). Moreover, there was no material loss of GaAs wafer observed in AcN+DMSO+HF solution during the removal of ion-implanted photoresist.