Abstract
The method of fabrication and measured characteristics of phosphorous ion-implanted resistors made on high-resistivity 15–20 Ω cm p-type silicon substrates are presented. The process included a shallow boron-implanted layer at the surface to prevent surface inversion due to Qss. It is demonstrated that enhancement N-channel MOSFET devices can be processed together with the implanted resistors. The range of phosphorous doses studied was 1×1012–5×1014/cm2 and the range of anneal temperatures considered was 500–950 °C. Results are given for measurements of sheet resistivity vs dose and anneal temperature, and for temperature coefficient of resistance. The advantages of using high-resistivity substrates for the implanted resistors are discussed.
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