Abstract
InP has been doped by implantation with several different ions to yield layers of both n- and p-type conductivity. Se+ and Si+ were found to be efficient n-type dopants with activations in excess of 75% for moderate doses (1×1014 cm−2 at 400 keV). At doses of 1×1015 cm−2, sheet resistivities as low as 15 Ω/⧠ were obtained. Cd+, Mg+, and Be+ were all acceptors, with Mg+ yielding a sheet hole concentration as high as 5×1013 cm−2 for a dose of 1×1014 cm−2 at 150 keV. Reproducible annealing of implanted samples at temperatures up to 750 °C was accomplished with a pyrolytic phosphosilicate glass (PSG) encapsulation. Implants of Kr+ indicate that residual implantation damage is n type.
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