Abstract
Studies on the influence of the vacuum conditions during ion implantation on the modification of the near-surface region for the systems Al Ti and Ti Al are presented. It was found that the two systems behave in a very different manner. While hydrogen gettering is observed under increased H 2 or H 2O partial pressure for the implantation of Ti ions into Al ( AlTi ), no similar behaviour is for the system Ti Al. O 2 backfilling of the implantation chamber leads to the growth of a titanium-oxide layer in the case of Al Ti, whereas no growth of an aluminium-oxide layer is observed at the system Ti Al. A common behaviour is seen for both systems where the gases H 2O, N 2 and O 2 are adsorbed on the sample surface; no such effect is observed for CH 4 and Ne.
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