Abstract
Si, Mg and C were implanted in undoped semi-insulating layers of Al x Ga 1− x N with x=0.12. Activation of implanted Si occurred after annealing at 1140°C in ammonia with subsequent anneal at 800°C in nitrogen. For a dose of 5 × 10 14cm −2 an average electron concentration of 1.2 × 10 18cm −3 was achieved. Implantation and annealing of Mg and C resulted in very highly resistive AlGaN layers for all annealing conditions, with no evidence of shallow acceptor activation. Proton implantation into initially conducting AlGaN produced highly resistive material suitable for electrical device isolation.
Published Version
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