Abstract
The effect of irradiation by Ar ions and thermal annealing on the properties of porous gallium phosphide (por-GaP) obtained by electrolytic methods is investigated. It is shown on the basis of Raman scattering and photoluminescence data that, in contrast with porous silicon, por-GaP does not have high radiation hardness, and that thermal annealing of defects in layers amorphized by ion implantation is impeded by the absence of a good crystal base for solid-state epitaxial recrystallization processes. Data on radiation-induced defect formation and from probing of the material with a rare-earth “luminescence probe” are consistent with a mesoporous structure of the material.
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