Abstract
In this paper results of As +-implantation (80 keV, 1 × 10 16 cm −2) into 4 μm deep trenches and supporting experiments for understanding the physical processes are presented. The dependence of side-wall doping on process sequence, incidence angle, and trench shape is discussed. Reflexion at grazing incidence appears to be higher than calculated by TRIM. The angular distribution of reflected particles is determined. As an example for application, sidewalls of trenches have been doped as it is necessary for corrugated capacitor cells of 4 Mbit DRAMs.
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