Abstract

ABSTRACTBoron ions were implanted into completed planar and edge Nb/Nb oxide/PbAuIn Josephson tunnel junctions to directly trim the Josephson pair currents, Io. The implantation caused an increase in Io and in the junction subgap conductance and a decrease in the junction energy gap. For a fixed junction fabrication procedure, the variations were observed to be monotonic with 11B implant dose. Optimum trimming was found when the 11B ions were implanted such that the peak in the depth distribution occurred at the tunnel barrier. The implantation caused an increase in Io and in the junction subgap conductance and a decrease in the junction energy gap. The implanted junctions are stable at 80°C and under storage.

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