Ion implantation induced modification of ta-C films

Abstract

Thin film samples (d~40nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc (FCVA), have been implanted with N+ at ion energy E = 20 keV and ion dose D = 3.1014 cm−2. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical transmission measurements. This shift is accompanied by a considerable increase of the absorption coefficient (photo-darkening effect) in the measured photon energy range (0.5÷3.0 eV). These effects could be attributed both to additional defect introduction and increased graphitization, as confirmed by IR and Raman measurements. The optical contrast thus obtained (between implanted and unimplanted film material) could be made use of for information archiving, in the area of high-density optical data storage while using focused ion nano-beams.