Abstract
Boron ion implantation-induced defects in SiO2 were investigated using slow positron annihilation spectroscopy and electron spin resonance (ESR). The defects caused by ion implantation are manifest as a particularly low S parameter in the region of the SiO2 layer in which B implantation damage occurs. The annealing behavior of the defect responsible for positron trapping was studied. The defect to which the positron is sensitive is found to be unobservable in ESR measurements. The defect is suggested to be dissolved O2 or a charged Frenkel defect, such as the negative nonbridging-oxygen hole center (≡Si—O−).
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