Abstract
Ion implantation is not only most widely used as a process for selectively introducing controlled amount of n- and p-type impurities in III-V compounds, but has become one of the key processes in the fabrication of GaAs MESFETs and their large scale integration. Many problems encountered during implantation and post-implantation annealing especially in GaAs and InP and techniques used to minimize/overcome them are discussed in this review. Some ion implantation work carried out in our laboratory towards fabrication of GaAs devices and circuits are also mentioned in the text.
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