Ion implantation for semiconductor processing

Abstract

Abstract The potential advantages of ion implantation have been exploited in virtually every kind of semiconductor device. Several commercially important devices owe their existence to this technique. Ion implantation provides precise control over the amount of dopant, concentration profile and lateral dimensions in device fabrication. The high degree of uniformity and reproducibility have made it possible to produce sophisticated devices and integrated circuits with high yield and tight tolerances. This is a truly planar process. It is possible to achieve high doping concentrations with relatively lower processing temperatures thereby avoiding lifetime degradation. The process is carried out in an inherently clean environment. A wide range of dopants is available and one is not limited by the particular properties of the substrate. There is great flexibility in choice of masking materials and self-alignment of doped regions in MOS devices is facilitated. The increasing impact of ion implantation on device technology is discussed with reference to some recent developments. Specific commercially manufactured devices are mentioned. Ion implantation machines continue to undergo development aimed at higher throughputs and cleaner vacuum. There is the need for greater reliability of machines. Effort is also directed at the development of low cost machines for dedicated applications. Design of implanted devices continues to be an empirical process in some respects. The ability to accurately predict profile shapes in samples implanted (perhaps through a screen oxide) and subject to complicated post-implantation process steps, would cut down development time and costs.