Abstract
This report discusses the current technical state of ion implantation technology as it is used in the GaAs IC fabrication process at NTT. Si and Be ion implantation with parallel-beam scanning is used to fabricate uniform FET channel layers. Phosphorus co-implantation into a Si-implanted layer improves both uniformity and activation efficiency. An effective active layer thickness of 450 Å was produced by a Si-implantion at 10 keV, and an even thinner effective active layer only 300 Å thick has also been obtained by 10 keV, SiF 3 molecular ion implantation. As a demonstration of the practicality of these ion implantation technologies, a 20.2 GHz dynamic binary frequency divider was fabricated.
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