Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas

Abstract

SiC grains can be grown without voids at the SiO2/Si interface using a simple method, i.e. annealing in CO gas. Present experiments aim to create nucleation centers for the SiC crystallite growth by carbon ion implantation. The formation of the nucleation clusters, as well as the morphology, the size and the density of the nanocrystals, were systematically studied by conventional and high resolution Transmission Electron Microscopy. The nanocrystallites were developed following two different modes of growth: The first develops facets along the <100> crystallographic direction giving tetragonal grains, and the second facets along the <110> direction resulting in elongated nanocrystallites. It was shown that combined low dose carbon implantation and subsequent high temperature annealing in CO leads to a substantial increase of the covering of the Si surface by high quality 3C-SiC nanocrystallites.