Abstract
Microcrystalline and nanocrystalline diamond thin films deposited on Si substrates by microwave plasma chemical vapor deposition are bombarded by 40 keV B+ ions. Raman scattering studies of the ion implanted diamond films reveal the structural modification irrespective of the nature of the crystalline quality. X-ray diffraction results indicate the possibility of formation of borocarbide phase on ion irradiation. Ion beam current dependence and post ion implantation annealing studies on the micro and nano-crystalline thin films are also presented.
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