Abstract
The evolution with annealing of defects in self-ion implanted silicon with high carbon content has been investigated by photoluminescence (PL). The PL spectra show that the high-content carbon can effectively prevent the formation of {113} self-interstitial aggregates defect in silicon of implant dose 1013 and 1014cm−2 and largely suppress the formation of {113} defect at higher implant doses. By trapping and storing the excess interstitials a variety of stable carbon-related clusters are formed, which could persist to quite high annealing temperature. The strong asymmetry of the PL band near 910meV, with a long tail on the high-energy side, may originate from the size distribution of Ostwald ripening carbon-related clusters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
