Abstract
ABSTRACTThe implantation of Ar+ ions into AlAs/GaAs layered samples is shown to give very different damage structures in the two materials. While the GaAs is relatively easily amorphised, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. The behaviour of the different damage structures when subjected to rapid thermal annealing treatments is described in some detail. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.
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