Abstract
The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1×1010–1×1016cm−2) for B+11, As+75, P+31, and BF2+ implanted in Si wafers at various energies. In addition, the use of excitation sources with a range of absorption coefficients is shown to be very useful in improving the sensitivity of the PCR amplitude to implant dose.
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