Ion implanation in group II–VI compounds

Abstract

A brief survey of possible experimental arrangements for ion implantation, with particular reference to those in the author's laboratory, is followed by a discussion of implantation parameters which have been shown to be important in the implantation doping of group II–VI compounds. There follows an illustration of the value of implantation in providing samples suitable for monitoring electron radiation damage and determining atomic displacement threshold energies in II–VI lattices. The potentialities of laser annealing and electron beam annealing are considered briefly. Optically-detected magnetic resonance is shown to be an important new technique in the study of radiation damage and the identification of defects in ion-implanted layers. Experimentally-observed changes in the energy splittings of implanted rare earth ions have been observed after various post-implantation isochronal annealing treatments and they have been compared with theoretical calculations based on simple crystal field models to give lattice site locations of the implanted ions. A review of published implantation work on II–VI compounds is followed by some thoughts on the future of ion implantation studies in II–VI compounds.