Abstract
Mass-resolved energy distributions (IEDs) are reported for a variety of ions striking the grounded electrodes of two dissimilar dry etching reactors operating at 13.56 MHz. All IEDs are recorded using the same electrostatic sector field energy analyser/quadrupole mass analyser combination. The chemistries studied are the etching of III–V multilayer structures in SiCl 4 plasmas and photoresist removal in Ar/O 2 plasmas. Values for plasma potential are determined and contrasted with theoretical predictions. The predominantly collisionless IEDs show peak splittings in good agreement with an analytical model, from which the dependence on ion mass and sheath width are etermined. A marked decrease in sheath width in O 2 and SiCl 4 plasmas compared with argon is inferred and attributed to the effect of negative ions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
