Abstract
rf power near the ion cyclotron-resonance frequency has been used to produce a hundredfold increase (from \ensuremath{\lesssim} 1 to \ensuremath{\sim} 100 eV) in the ion temperature in a toroidal octupole device. The heating produces no noticeable instabilities or other deleterious effects except for a high reflux of neutrals from the walls. The heating rate is consistent with theory and the limiting ion temperature is determined by charge-exchange losses.
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