Abstract
Aligned and random ion channelling analysis was performed on p+n diode structures in (100) silicon, with the Surrey nuclear microprobe. Three different types of diode were investigated, each pre-amorphised by a different ion (Si+, Ge+ or Sn+) before the p+ region was formed by BF2+ implantation. The ion channelling measurements are presented and compared with previously published electrical measurements on these diodes. Relatively large residual disorder and junction leakage currents were found for the Si+ pre-amorphised diodes; however, all the diodes were leaky (>10-6 A cm-2). The results are consistent with dislocation loops within the depletion regions of the diodes causing both the residual disorder and the large leakage currents. Cross-sectional transmission electron microscopy studies support this model.
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