Abstract
We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe 3Si/Ge(111) and Fe 2CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe 3−xMn xSi/Ge(111) ( x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn–Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
