Abstract
The characteristics of ion and electron fluxes to the surface of a growing silicon film are investigated in various rf discharge regimes in silane at frequencies of 13.56 MHz and 58 MHz in plasma-enhanced chemical vapor-deposition (PECVD) apparatus. The energy spectra of the ions and electrons bombarding the growing film are measured. The electronic properties of films grown under various degrees of ion bombardment are studied. The correlation of these properties with the ion parameters in the rf discharge plasma during film growth is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
