Abstract
The characteristics of ion and electron fluxes to the surface of a growing silicon film are investigated in various rf discharge regimes in silane at frequencies of 13.56 MHz and 58 MHz in plasma-enhanced chemical vapor-deposition (PECVD) apparatus. The energy spectra of the ions and electrons bombarding the growing film are measured. The electronic properties of films grown under various degrees of ion bombardment are studied. The correlation of these properties with the ion parameters in the rf discharge plasma during film growth is discussed.
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