Abstract
Al/Ti films were deposited on 128° Y-X LiNbO3 substrates by electron-beam (e-beam) deposition. Low-energy Ar ion beam bombardment was employed during the Ti underlayer deposition. Influence of low-energy beam bombardment on the texture of Al/Ti films was investigated by x-ray diffraction (XRD) analysis. It was found that Al films deposited on Ar-ion bombarded Ti underlayers possessed excellent (111) texture. With the textured Al/Ti films, a 2.3-GHz range image-impedance connection surface acoustic wave (SAW) filter was successfully fabricated.
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