Ion bombardment-induced charge state effects CaO single crystals: F+and F centers

Abstract

Abstract The effects of heavy-and light-ion bombardment on defect formation in CaO have been investigated by UV-absorption spectroscopy and volume measurements. While 500 keV Ar or Ca implantation produces only F+ centers, 240 keVH produces both F+ and F centers at a F+ to F ratio of 5.6 to 1. On the other hand, when an argon implanted sample is subsequently bombarded with hydrogen, about 30% of the F+ centers anneal during 1 ×1014 H/cm2; at higher H fluences, new F+ and F centers are produced. An effect of energy partition between ionization and nuclear/atomic collision processes for the incident ions on the charge state of the resulting defect is thus clearly demonstrated. The formation and annealing of these defects are accompanied by volume changes in the ion implanted surface layer which can be monitored in sltu with a cantilever beam technique. The measurements show volume expansion of the order of 1.5% following 1016 500 keV Ar implantation; subsequent implantation of 1018 240 keV H compacts the previously expanded material by 25 %. These results are in qualitative agreement with the optical data and seem to indicate that volume changes are associated with the formation and annealing of F+ centers.